X-ray metrology for advanced silicon processes

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 21-27

  Wyon, C ^a   Gonchond, J P ^b   Delille, D ^c   Michallet, A ^b   Royer, J C ^a   Kwakman, L ^c   Marthon, S ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Cu interconnects; Dielectrics; Low ; Small angle X ray scattering (SAXS); X ray fluorescence (XRF); X ray reflectivity (XRR)

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COPPER; INTEGRATED CIRCUITS; PORE SIZE; POROUS MATERIALS; X RAY SCATTERING;

SMALL ANGLE X RAY SCATTERING (SAXS); X RAY FLUORESCENCE (XRF); X-RAY REFLECTIVITY (XRR);

DIELECTRIC MATERIALS;

EID: 33750525318     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.123     Document Type: Article

References (7)

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