Quantitative study of hydrogen-implantation-induced cavities in silicon by grazing incidence small angle x-ray scattering

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Capello, L ^a,c   Rieutord, F ^a   Tauzin, A ^b   Mazen, F ^b  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL ANALYSIS; HYDROGEN; ION IMPLANTATION; SILICON; X RAY SCATTERING;

BURIED OBJECTS; HYDROGEN-INDUCED DEFECT; NONDESTRUCTIVE MANNER;

MICROCAVITIES;

EID: 34547565264     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2761821     Document Type: Article

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