SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 144-157

Towards implementation of a nickel silicide process for CMOS technologies

(4) Lavoie, C a D'Heurle, F M a Detavernier, C a Cabral Jr , C a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

Agglomeration; CoSi2; Diffusion; Film stability; Metal rich phase; Nickel silicide; NiSi

Indexed keywords

AGGLOMERATION; ELECTRIC CONTACTS; NICKEL COMPOUNDS; SOLUBILITY;

FILM STABILITY;

CMOS INTEGRATED CIRCUITS;

EID: 0142055828 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(03)00380-0 Document Type: Conference Paper

Times cited : (408)

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