Synchrotron microbeam x-ray radiation damage in semiconductor layers

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Polvino, Sean M ^a   Murray, Conal E ^b   Kalenci, Özgür ^a   Noyan, I C ^a   Lai, Barry ^c   Cai, Zhoghou ^c  

^a Columbia University ^*  (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTODEGRADATION; RADIATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; X RAY OPTICS; X RAYS;

AMERICAN INSTITUTE OF PHYSICS (AIP); BEAM SIZES; DAMAGE INITIATION; LATTICE (CO); MICRO BEAMS; ORDER-OF MAGNITUDES; SEMICONDUCTOR LAYERS; SILICON ON INSULATOR (SOI); STRUCTURAL DAMAGES; X RAY DIFFRACTION PEAKS; X RAY RADIATIONS; X-RAY MICROBEAMS;

X RAY DIFFRACTION ANALYSIS;

EID: 44849094736     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2942380     Document Type: Article

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