Anomalous gate-edge leakage current in nMOSFETs caused by encroached growth of nickel silicide and its suppression by confinement of silicidation region using advanced + ion-implantation technique

IEEE Transactions on Electron Devices

Volumn 56, Issue 2, 2009, Pages 206-213

  Yamaguchi, Tadashi ^a   Kashihara, Keiichiro ^a   Okudaira, Tomonori ^a   Tsutsumi, Toshiaki ^a   Maekawa, Kazuyoshi ^a   Murata, Naofumi ^a   Tsuchimoto, Junichi ^a   Asai, Koyu ^a   Yoneda, Masahiro ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

CMOS; Implantation; Leakage current; Nickel silicide; Nickel silicide encroachment; nMOSFETs; Self aligned silicide (SALICIDE); Si ion

Indexed keywords

AMORPHOUS SILICON; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; GROWTH (MATERIALS); HETEROJUNCTION BIPOLAR TRANSISTORS; IONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MOSFET DEVICES; NICKEL; NICKEL ALLOYS; NICKEL OXIDE; PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SILICON; TRANSISTORS;

CMOS; IMPLANTATION; LEAKAGE CURRENT; NICKEL SILICIDE; NICKEL SILICIDE ENCROACHMENT; NMOSFETS; SELF-ALIGNED SILICIDE (SALICIDE); SI ION;

SILICIDES;

EID: 59849101911     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2010588     Document Type: Article

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