Process-variation effect, metal-gate work-function fluctuation, and random-dopant fluctuation in emerging CMOS technologies

IEEE Transactions on Electron Devices

Volumn 57, Issue 2, 2010, Pages 437-447

  Li, Yiming ^a,b   Hwang, Chih Hong ^a   Li, Tien Yeh ^a   Han, Ming Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Circuit; Coupled device circuit simulation; Emerging device technology; Intrinsic parameter fluctuation; Modeling and simulation; Nanoscale MOSFET; Power fluctuation

Indexed keywords

CIRCUIT; COUPLED DEVICES; DEVICE TECHNOLOGIES; MODELING AND SIMULATION; NANOSCALE MOSFETS; PARAMETER FLUCTUATIONS; POWER FLUCTUATIONS;

CAPACITANCE; CIRCUIT SIMULATION; CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS;

COUPLED CIRCUITS;

EID: 76349126341     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2036309     Document Type: Article

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