Discrete-dopant-induced characteristic fluctuations in 16 nm multiple-gate silicon-on-insulator devices

Journal of Applied Physics

Volumn 102, Issue 8, 2007, Pages

  Li, Yiming ^a   Hwang, Chih Hong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORTATION; CHARACTERISTIC FLUCTUATIONS; DEVICE CHARACTERISTICS; FIELD EFFECT TRANSISTOR (FETS); NANOSCALE SEMICONDUCTOR DEVICES; SILICON-ON-INSULATOR DEVICES; THREE-DIMENSIONAL CHANNELS; VERTICAL CHANNEL STRUCTURE;

FIELD EFFECT TRANSISTORS; SILICON ON INSULATOR TECHNOLOGY;

DOPING (ADDITIVES);

EID: 52649096841     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2801013     Document Type: Article

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