On discrete random dopant modeling in drift-diffusion simulations: Physical meaning of 'atomistic' dopants

Microelectronics Reliability

Volumn 42, Issue 2, 2002, Pages 189-199

  Sano, Nobuyuki ^a   Matsuzawa, Kazuya ^b   Mukai, Mikio ^b   Nakayama, Noriaki ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; MICROELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ATOMISTIC DOPANTS;

MOSFET DEVICES;

EID: 0036473348     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00138-X     Document Type: Article

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