Impact of intrinsic parameter fluctuations on SRAM cell design

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 1290-1292

  Cheng, B ^a   Roy, S ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; HIERARCHICAL SYSTEMS; LOGIC DESIGN; MATHEMATICAL MODELS;

PARAMETER FLUCTUATION; RANDOM DOPANT FLUCTUATION; STATIC NOISE MARGIN;

STATIC RANDOM ACCESS STORAGE;

EID: 34547307410     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306117     Document Type: Conference Paper

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