Impact of additional factors in threshold voltage variability of metal/high-k gate stacks and its reduction by controlling crystalline structure and grain size in the metal gates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Ohmori, K ^a   Matsuki, T ^b   Ishikawa, D ^b   Morooka, T ^b   Aminaka, T ^b   Sugita, Y ^b   Chikyow, T ^c   Shiraishi, K ^d   Nara, Y ^b   Yamada, K ^a  

^a WASEDA UNIVERSITY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE FILMS; CRYSTALLINE STRUCTURES; GRAIN SIZES; METAL GATES; METAL/HIGH-K GATES; RANDOM DOPANT FLUCTUATIONS; THRESHOLD VOLTAGE VARIABILITIES; TIN METAL GATES;

CRYSTALLINE MATERIALS; ELECTRON DEVICES; GRAIN SIZE AND SHAPE; HAFNIUM COMPOUNDS; LOGIC GATES; METALS; THRESHOLD VOLTAGE; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

CRYSTAL STRUCTURE;

EID: 64549100212     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796707     Document Type: Conference Paper

References (5)

1. K. Takeuchi et al., "Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies," IEDM p. 467 (2007).
2. H. Fukutome et al., "Suppression of Poly-Gate-Induced Fluctuations in Carrier Profiles of Sub-50nm MOSFETs," IEDM p. 281 (2006).
3. H. B. Michaelson, "The work function of the elements and its periodicity," J. Appl. Phys. 48 (1977) 4729.
4. K. Ohmori et al., "Wide Controllability of Flatband Voltage by Tuning Crystalline Microstructures in Metal Gate Electrodes," IEDM p. 345 (2007).
5. D. Ishikawa et al., "Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86 nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique," SSDM p. 846 (2007).