Impact of parameter variations and random dopant fluctuations on short-channel fully depleted SOI MOSFETs with extremely thin BOX

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 740-742

  Ohtou, Tetsu ^a   Sugii, Nobuyuki ^b   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Fully depleted (FD) silicon on insulator (SOI) MOSFET; Random dopant fluctuation (RDF); Thin buried oxide (BOX); Variability

Indexed keywords

COMPUTER SIMULATION; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

PARAMETER VARIATION; RANDOM DOPANT FLUCTUATION; THIN BURIED OXIDE;

MOSFET DEVICES;

EID: 34547781729     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.901276     Document Type: Article

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