A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation

Journal of Computational and Applied Mathematics

Volumn 175, Issue 1 SPEC. ISS., 2005, Pages 87-99

  Li, Yiming ^a,b,c   Yu, Shao Ming ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NONE   (Taiwan)

Author keywords

Adaptive computational method; Domain decomposition; Double gate MOSFETs; Nanoscale device; Parallel algorithm; Quantum correction model; Semiconductor device simulation

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; MOSFET DEVICES; PARALLEL ALGORITHMS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

ADAPTIVE COMPUTATIONAL METHOD; DOMAIN DECOMPOSITION; DOUBLE GATE MOSFETS; NANOSCALE DEVICE; QUANTUM CORRECTION MODEL;

FINITE VOLUME METHOD;

EID: 11044221347     PISSN: 03770427     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cam.2004.06.001     Document Type: Article

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