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Volumn 23, Issue 6, 2004, Pages 837-842

Multidimensional discretization of the stationary quantum drift-diffusion model for ultrasmall MOSFET structures

Author keywords

Density gradient theory; Discretization; Double gate MOSFET; MOSFET; Quantum confinement; Quantum drift diffusion (QDD) model; Semiconductor transport

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; GATES (TRANSISTOR); HYDRODYNAMICS; MATHEMATICAL MODELS; MATHEMATICAL TRANSFORMATIONS; QUANTUM THEORY; STRESSES; TENSORS;

EID: 2942579366     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2004.828128     Document Type: Article
Times cited : (72)

References (18)
  • 1
    • 0036508039 scopus 로고    scopus 로고
    • Beyond the conventional transistor
    • H.-S. P. Wong, "Beyond the conventional transistor," IBM J. Res. Develop., vol. 46, no. 2, pp. 133-168, 2002.
    • (2002) IBM J. Res. Develop. , vol.46 , Issue.2 , pp. 133-168
    • Wong, H.-S.P.1
  • 2
    • 0000776042 scopus 로고
    • Macroscopic physics of the silicon inversion layer
    • M. G. Ancona and H. F. Tiersten, "Macroscopic physics of the silicon inversion layer," Phys. Rev. B, vol. 35, no. 15, pp. 7959-7965, 1987.
    • (1987) Phys. Rev. B , vol.35 , Issue.15 , pp. 7959-7965
    • Ancona, M.G.1    Tiersten, H.F.2
  • 3
    • 0000977058 scopus 로고
    • Quantum correction to the equation of sate of an electron gass in a semicunductor
    • M. G. Ancona and G. J. Iafrate, "Quantum correction to the equation of sate of an electron gass in a semicunductor," Phys. Rev. B, vol. 39, no. 13, pp. 9536-9540, 1989.
    • (1989) Phys. Rev. B , vol.39 , Issue.13 , pp. 9536-9540
    • Ancona, M.G.1    Iafrate, G.J.2
  • 4
    • 0028413338 scopus 로고
    • The quantum hydrodynamic model for semiconductor devices
    • C. L. Gardner, "The quantum hydrodynamic model for semiconductor devices," SIAM J. Appl. Math., vol. 54, no. 2, pp. 409-427, 1994.
    • (1994) SIAM J. Appl. Math. , vol.54 , Issue.2 , pp. 409-427
    • Gardner, C.L.1
  • 6
    • 0002899780 scopus 로고    scopus 로고
    • Multi-dimensional quantum effect simulation using a density-gradient model and script-level programming techniques
    • Sept.
    • C. S. Rafferty, B. Biegel, Z. Yu, M. G. Ancona, J. Bude, and R. W. Dutton, "Multi-dimensional quantum effect simulation using a density-gradient model and script-level programming techniques," in Proc. SISPAD, Sept. 1998, pp. 137-140.
    • (1998) Proc. SISPAD , pp. 137-140
    • Rafferty, C.S.1    Biegel, B.2    Yu, Z.3    Ancona, M.G.4    Bude, J.5    Dutton, R.W.6
  • 7
    • 0003033838 scopus 로고    scopus 로고
    • The stationary current-voltage characteristics of the quantum drift-diffusion model
    • R. Pinnau and A. Unterreiter, "The stationary current-voltage characteristics of the quantum drift-diffusion model," SIAM J. Numer. Anal., vol. 37, no. 1, pp. 211-245, 1999.
    • (1999) SIAM J. Numer. Anal. , vol.37 , Issue.1 , pp. 211-245
    • Pinnau, R.1    Unterreiter, A.2
  • 8
    • 0033725016 scopus 로고    scopus 로고
    • Nonlinear discretization scheme for the density gradient equations
    • Sept.
    • M. G. Ancona and B. A. Biegel, "Nonlinear discretization scheme for the density gradient equations," in Proc. SISPAD, Sept. 2000, pp. 196-199.
    • (2000) Proc. SISPAD , pp. 196-199
    • Ancona, M.G.1    Biegel, B.A.2
  • 9
    • 2942571249 scopus 로고    scopus 로고
    • Finite-difference schemes for the density-gradient equations
    • M. G. Ancona, "Finite-difference schemes for the density-gradient equations," J. Computat. Electron., vol. 1, pp. 435-443, 2002.
    • (2002) J. Computat. Electron. , vol.1 , pp. 435-443
    • Ancona, M.G.1
  • 10
    • 0035249575 scopus 로고    scopus 로고
    • Quantum device simulation with density gradient model on unstructured grids
    • Feb.
    • A. Wettstein, A. Schenk, and W. Fichtner, "Quantum device simulation with density gradient model on unstructured grids," IEEE Trans. Electron Devices, vol. 48, pp. 279-284, Feb. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 279-284
    • Wettstein, A.1    Schenk, A.2    Fichtner, W.3
  • 11
    • 84943636673 scopus 로고    scopus 로고
    • Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model
    • Sept.
    • E. Lyumkis, R. Mickevicius, O. Penzin, B. Polsky, K. El Sayed, A. Wettestein, and W. Fichtner, "Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model," in Proc. SISPAD, Sept. 2002, pp. 271-274.
    • (2002) Proc. SISPAD , pp. 271-274
    • Lyumkis, E.1    Mickevicius, R.2    Penzin, O.3    Polsky, B.4    El Sayed, K.5    Wettestein, A.6    Fichtner, W.7
  • 12
    • 0012332591 scopus 로고    scopus 로고
    • Macroscopic quantum carrier transport modeling
    • Sept.
    • Z. Yu, R. W. Dutton, D. Yergeau, and M. G. Ancona, "Macroscopic quantum carrier transport modeling," in Proc. SISPAD, Sept. 2001, pp. 1-9.
    • (2001) Proc. SISPAD , pp. 1-9
    • Yu, Z.1    Dutton, R.W.2    Yergeau, D.3    Ancona, M.G.4
  • 14
    • 84916389355 scopus 로고
    • Large signal analysis of a silicon Read diode oscillator
    • Jan
    • D. L. Scharfetter and H. K. Gummel, "Large signal analysis of a silicon Read diode oscillator," IEEE Trans. Electron Devices, vol. ED-16, pp. 64-77, Jan. 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 64-77
    • Scharfetter, D.L.1    Gummel, H.K.2
  • 15
    • 0035307248 scopus 로고    scopus 로고
    • Quantum enhancement of the randam dopant induced threshold voltage fluctuations in sub-100 nm MOSFETs: A 3-D density-gradient simulation study
    • Apr.
    • A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies, and S. Saini, "Quantum enhancement of the randam dopant induced threshold voltage fluctuations in sub-100 nm MOSFETs: A 3-D density-gradient simulation study," IEEE Trans. Electron Devices, vol. 48, pp. 722-729, Apr. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 722-729
    • Asenov, A.1    Slavcheva, G.2    Brown, A.R.3    Davies, J.H.4    Saini, S.5
  • 17
    • 0023401301 scopus 로고
    • Some error estimates for the box method
    • R. E. Bank and D. J. Rose, "Some error estimates for the box method," SIAM J. Numer. Anal., vol. 24, no. 4, pp. 777-787, 1987.
    • (1987) SIAM J. Numer. Anal. , vol.24 , Issue.4 , pp. 777-787
    • Bank, R.E.1    Rose, D.J.2
  • 18
    • 0024718053 scopus 로고
    • MOS device modeling at 77 K
    • Aug.
    • S. Selberherr, "MOS device modeling at 77 K," IEEE Trans. Electron Devices, vol. 36, pp. 1464-1474, Aug. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1464-1474
    • Selberherr, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.