Large-scale "atomistic" approach to discrete-dopant-induced characteristic fluctuations in silicon nanowire transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 6, 2008, Pages 1505-1510

  Li, Yiming ^a   Hwang, Chih Hong ^a   Huang, Hsuan Ming ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORTATIONS; CHANNEL REGIONS; COVERAGE RATIOS; DEVICE PERFORMANCES; DISCRETE; DOPANT CONCENTRATIONS; DOPANT EFFECTS; DOPANT POSITIONS; FINFETS; GATE STRUCTURES; LARGE-SCALE; MANUFACTURABILITY; NANOELECTRONIC DEVICES; NANOSCALE SEMICONDUCTOR DEVICES; NANOWIRE TRANSISTORS; SILICON NANOWIRE TRANSISTORS; SURROUNDING GATES;

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOWIRES; RANDOM PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICON; THREE DIMENSIONAL; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 54549115996     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778164     Document Type: Conference Paper

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