The potential of FinFETs for analog and RF circuit applications

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 54, Issue 11 SPEC. ISS., 2007, Pages 2541-2551

  Wambacq, Piet ^a,b   Verbruggen, Bob ^a,b   Scheir, Karen ^a,b   Borremans, Jonathan ^a,b   Dehan, Morin ^a   Linten, Dimitri ^a   De Heyn, Vincent ^a   Van der Plas, Geert ^a   Mercha, Abdelkarim ^a   Parvais, Bertrand ^a   Gustin, Cedric ^a   Subramanian, Vaidy ^a,c   Collaert, Nadine ^a   Jurczak, Malgorzata ^a   Decoutere, Stefaan ^a  

^a IMEC   (Belgium)

^b VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Electrostatic discharges (ESDs); Fin shaped field effect transistor (FinFET); Mixed analog integrated circuits; Nanotechnology

Indexed keywords

ALUMINUM NITRIDE; ANALOG INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; CUTOFF FREQUENCY; DIELECTRIC MATERIALS; ELECTRIC DISCHARGES; ELECTROSTATIC DEVICES; FINFET; FINS (HEAT EXCHANGE); GATE DIELECTRICS; MILLIMETER WAVES; NANOELECTRONICS; NANOTECHNOLOGY; REFRACTORY METAL COMPOUNDS; SILICA; SILICON OXIDES; TIMING CIRCUITS;

ACCEPTABLE PERFORMANCE; DRAIN-INDUCED BARRIER LOWERING; FIN-SHAPED FIELD-EFFECT TRANSISTOR (FINFET); FUNCTIONAL PROTOTYPES; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; MILLIMETER WAVE FREQUENCIES; SHORT-CHANNEL EFFECT; TRANSISTOR ARCHITECTURE;

TRANSISTORS;

EID: 49049117671     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2007.907866     Document Type: Article

References (28)

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