High-frequency characteristic fluctuations of nano-MOSFET circuit induced by random dopants

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 12, 2008, Pages 2726-2733

  Li, Yiming ^a   Hwang, Chih Hong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Characteristic fluctuation; Fluctuation suppression technique; High frequency; Modeling and simulation; Nanometer scale metal oxide semiconductor field effect transistors (MOSFET) device and circuit; Random dopant effect

Indexed keywords

BANDWIDTH; DIELECTRIC DEVICES; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; POLARIZATION; RANDOM PROCESSES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SURFACE DIFFUSION; TELECOMMUNICATION SYSTEMS; TRANSISTORS;

CHARACTERISTIC FLUCTUATION; FLUCTUATION SUPPRESSION TECHNIQUE; HIGH FREQUENCY; MODELING AND SIMULATION; NANOMETER SCALE METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) DEVICE AND CIRCUIT; RANDOM DOPANT EFFECT;

COUPLED CIRCUITS;

EID: 57849152941     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2008.2007077     Document Type: Conference Paper

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