메뉴 건너뛰기




Volumn 45, Issue 9, 1998, Pages 1960-1971

Modeling statistical dopant fluctuations in MOS transistors

Author keywords

Cmos logic devices; Semiconductor device doping; Semiconductor device modeling; Silicon materials devices

Indexed keywords

CMOS INTEGRATED CIRCUITS; LOGIC DEVICES; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; STATISTICAL METHODS;

EID: 0032164821     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711362     Document Type: Article
Times cited : (350)

References (35)
  • 1
    • 0000901940 scopus 로고    scopus 로고
    • Fundamental limitations in microelectronics-I. MOS technology
    • vol. 15, pp. 819-829, 1972.
    • B. Hoeneisen and C. A. Mead, Fundamental limitations in microelectronics-I. MOS technology, Solid State Electron., vol. 15, pp. 819-829, 1972.
    • Solid State Electron.
    • Hoeneisen, B.1    Mead, C.A.2
  • 2
    • 0016572578 scopus 로고    scopus 로고
    • The effect of randomness in the distribution of impurity atoms on FET thresholds
    • vol. 8, pp. 251-259, 1975.
    • R. W. Keyes, The effect of randomness in the distribution of impurity atoms on FET thresholds, Appl. Phys, vol. 8, pp. 251-259, 1975.
    • Appl. Phys
    • Keyes, R.W.1
  • 3
    • 0028571338 scopus 로고    scopus 로고
    • Implications of fundamental threshold voltage variations for high-density SRAM and logic circuits, in
    • 94, pp. 15-16.
    • D. Burnett, K. Erington, C. Subramanian, and K. Baker, Implications of fundamental threshold voltage variations for high-density SRAM and logic circuits, in Tech. Digest VLSI Symp.'94, pp. 15-16.
    • Tech. Digest VLSI Symp.'
    • Burnett, D.1    Erington, K.2    Subramanian, C.3    Baker, K.4
  • 4
    • 0029516202 scopus 로고    scopus 로고
    • Intra-die device parameter variations and their impact on digital CMOS gates at low supply voltages, in
    • 1995, pp. 67-70.
    • M. Eisele, J. Berthold, R. Thewes, E. Wohlrab, D. Schmitt-Landsiedel, and W. Weber, Intra-die device parameter variations and their impact on digital CMOS gates at low supply voltages, in IEDM Tech. Dig., 1995, pp. 67-70.
    • IEDM Tech. Dig.
    • Eisele, M.1    Berthold, J.2    Thewes, R.3    Wohlrab, E.4    Schmitt-Landsiedel, D.5    Weber, W.6
  • 5
    • 0022891057 scopus 로고    scopus 로고
    • Characterization and modeling of mismatch in MOS transistors for precision analog design
    • vol. 21, pp. 1057-1066, 1986.
    • K. R. Eakshimikumar, R. A. Hadaway, and M. A. Copeland, Characterization and modeling of mismatch in MOS transistors for precision analog design, IEEE J. Solid-State Circuits, vol. 21, pp. 1057-1066, 1986.
    • IEEE J. Solid-State Circuits
    • Eakshimikumar, K.R.1    Hadaway, R.A.2    Copeland, M.A.3
  • 7
    • 0031188590 scopus 로고    scopus 로고
    • CMOS technology for mixed signal IC's
    • vol. 41, pp. 967-974, 1997.
    • M. J. M. Pelgrom and M. Vertregt, CMOS technology for mixed signal IC's, Solid-State Electron., vol. 41, pp. 967-974, 1997.
    • Solid-State Electron.
    • Pelgrom, M.J.M.1    Vertregt, M.2
  • 8
    • 0028548950 scopus 로고    scopus 로고
    • Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's
    • vol. 41, pp. 2216-2221, 1994.
    • T. Mizuno, J.-I. Okamura, and A. Toriumi, Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's, IEEE Trans. Electron Devices, vol. 41, pp. 2216-2221, 1994.
    • IEEE Trans. Electron Devices
    • Mizuno, T.1    Okamura, J.-I.2    Toriumi, A.3
  • 9
    • 33747072717 scopus 로고    scopus 로고
    • Physical limitation of UESI's due to performance fluctuations of MOSFET's
    • 94, pp. 13-19.
    • T. Mizuno, Physical limitation of UESI's due to performance fluctuations of MOSFET's, Tech. Rep. IEICE SDM-94, pp. 13-19.
    • Tech. Rep. IEICE SDM
    • Mizuno, T.1
  • 10
    • 0030084540 scopus 로고    scopus 로고
    • Influence of statistical spatial-nonuniformity of dopant atoms on threshold voltage in a system of many MOSFET's
    • vol. 35, pp. 842-848, 1996.
    • -, Influence of statistical spatial-nonuniformity of dopant atoms on threshold voltage in a system of many MOSFET's, Jpn. J. Appl. Phys., vol. 35, pp. 842-848, 1996.
    • Jpn. J. Appl. Phys.
  • 11
    • 0020240615 scopus 로고    scopus 로고
    • Threshold voltage deviation in very small MOS transistors due to local impurity fluctuations, in
    • 82, pp. 46-47.
    • T. Hagiwara, K. Yamaguchi, and S. Asai, Threshold voltage deviation in very small MOS transistors due to local impurity fluctuations, in Tech. Dig. VLSI Symp. '82, pp. 46-47.
    • Tech. Dig. VLSI Symp. '
    • Hagiwara, T.1    Yamaguchi, K.2    Asai, S.3
  • 12
    • 0026837975 scopus 로고    scopus 로고
    • Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage
    • vol. 39, pp. 634-639, 1992.
    • K. Nishinohara, N. Shigyo, and T. Wada, Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage, IEEE Trans. Electron Devices, vol. 39, pp. 634-639, 1992.
    • IEEE Trans. Electron Devices
    • Nishinohara, K.1    Shigyo, N.2    Wada, T.3
  • 13
    • 0027813761 scopus 로고    scopus 로고
    • Three-dimensional 'atomistic' simulation of discrete random dopant distribution effects in sub-0.1
    • 1993, pp. 705-708.
    • H.-S. Wong and Y. Taur, Three-dimensional 'atomistic' simulation of discrete random dopant distribution effects in sub-0.1 ftm MOSFET's, in IEDM Tech. Dig., 1993, pp. 705-708.
    • Ftm MOSFET's, in IEDM Tech. Dig.
    • Wong, H.-S.1    Taur, Y.2
  • 14
    • 0029714801 scopus 로고    scopus 로고
    • Random MOSFET parameter fluctuation limits to gigascale integration (GSI), in
    • 96, pp. 198-199.
    • V. K. De, X. Tang, and J. D. Meindl, Random MOSFET parameter fluctuation limits to gigascale integration (GSI), in Tech. Dig, VLSI Symp.'96, pp. 198-199.
    • Tech. Dig, VLSI Symp.'
    • De K, V.1    Tang, X.2    Meindl, J.D.3
  • 15
    • 0024105667 scopus 로고    scopus 로고
    • A physically based mobility model for numerical simulation of nonplanar devices
    • vol. 7, pp. 1164-1170, 1988.
    • C. Lombard!, S. Manzini, A. Saporito, and M. Vanzi, A physically based mobility model for numerical simulation of nonplanar devices, IEEE Trans. Computer-Aided Design, vol. 7, pp. 1164-1170, 1988.
    • IEEE Trans. Computer-Aided Design
    • Lombard, C.1    Manzini, S.2    Saporito, A.3    Vanzi, M.4
  • 19
    • 0024718053 scopus 로고    scopus 로고
    • MOS device modeling at 77 K
    • vol. 36, pp. 1464-1474, 1989.
    • S. Selberherr, MOS device modeling at 77 K, IEEE Trans. Electron Devices, vol. 36, pp. 1464-1474, 1989.
    • IEEE Trans. Electron Devices
    • Selberherr, S.1
  • 23
    • 0028055460 scopus 로고    scopus 로고
    • Applying a submicron mismatch model to practical 1C design
    • 1994 Custom Integrated Circuits Conf., pp. 297-300.
    • C. Guardian!, A. Tomasini, J. Benkonski, M. Quarantelli, and P. Gubian, Applying a submicron mismatch model to practical 1C design, Proc. IEEE 1994 Custom Integrated Circuits Conf., pp. 297-300.
    • Proc. IEEE
    • Guardian, C.1    Tomasini, A.2    Benkonski, J.3    Quarantelli, M.4    Gubian, P.5
  • 26
    • 0030396105 scopus 로고    scopus 로고
    • The effect of statistical dopant fluctuations on MOS device performance, in
    • 1996, pp. 627-630.
    • P. A. Stolk and D. B. M. Klaassen, The effect of statistical dopant fluctuations on MOS device performance, in IEDM Tech. Dig., 1996, pp. 627-630.
    • IEDM Tech. Dig.
    • Stolk, P.A.1    Klaassen, D.B.M.2
  • 27
    • 33747070094 scopus 로고    scopus 로고
    • "Compact MOS modeling for analog circuit simulation, in
    • see also http://www.semiconductors, philips.com/Philips_Models.
    • R. M. D. A. Velghe, D. B. M. Klaassen, and F. M. Klaassen, "Compact MOS modeling for analog circuit simulation, in IEDM Tech. Dig, 1993, pp. 485188; see also http://www.semiconductors, philips.com/Philips_Models.
    • IEDM Tech. Dig , vol.1993 , pp. 485188
    • Velghe, R.M.1    Klaassen, D.B.M.2    Klaassen, F.M.3
  • 28
    • 0029521785 scopus 로고    scopus 로고
    • Circuit sensitivity analysis in terms of process parameters, in
    • 1995, pp. 941-944.
    • M. J. van Dort and D. B. M. Klaassen, Circuit sensitivity analysis in terms of process parameters, in IEDM Tech. Dig., 1995, pp. 941-944.
    • IEDM Tech. Dig.
    • Van Dort, M.J.1    Klaassen, D.B.M.2
  • 31
    • 0001832223 scopus 로고    scopus 로고
    • A powerful TCAD system including advanced RSM techniques for various engineering optimization problems
    • vol. 5, S. Selberherr, H. Stippel, and E. Strasser, Eds. Vienna, Austria: Springer-Verlag, 1993, p. 2932.
    • R. Cartuyvels, R. Booth, S. Kubicek, L. Dupas, and K. M. de Meyer, A powerful TCAD system including advanced RSM techniques for various engineering optimization problems, in Simulation of Semiconductor Devices and Processes, vol. 5, S. Selberherr, H. Stippel, and E. Strasser, Eds. Vienna, Austria: Springer-Verlag, 1993, p. 2932.
    • Simulation of Semiconductor Devices and Processes
    • Cartuyvels, R.1    Booth, R.2    Kubicek, S.3    Dupas, L.4    De Meyer, K.M.5
  • 32
    • 0040760207 scopus 로고    scopus 로고
    • New optimization strategy combining response surface model and LevenbergMarquardt methods for various optimization purposes, in
    • 95, pp. 79-82, 1995.
    • H. G. A. Huizing, R. Cartuyvels, L. Dupas, and W. Crans, New optimization strategy combining response surface model and LevenbergMarquardt methods for various optimization purposes, in Proc. ESSDERC-95, pp. 79-82, 1995.
    • Proc. ESSDERC
    • Huizing, H.G.A.1    Cartuyvels, R.2    Dupas, L.3    Crans, W.4
  • 33
    • 84861732229 scopus 로고    scopus 로고
    • A new short channel MOSFET with an atomic-layer-doped impurity profile (ALD-MOSFET)
    • vol. 22-1, pp. 267-270, 1983.
    • K. Yamaguchi, Y. Shiraki, Y. Katayama, and Y. Murayama, A new short channel MOSFET with an atomic-layer-doped impurity profile (ALD-MOSFET), Jpn. J. Appl. Phys. Suppl, vol. 22-1, pp. 267-270, 1983.
    • Jpn. J. Appl. Phys. Suppl
    • Yamaguchi, K.1    Shiraki, Y.2    Katayama, Y.3    Murayama, Y.4
  • 34
    • 36549091800 scopus 로고    scopus 로고
    • Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy
    • vol. 54, pp. 1869-1871, 1989.
    • K. Nakagawa, A. A. van Gorkum, and Y. Shiraki, Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy, Appl. Phys. Lett., vol. 54, pp. 1869-1871, 1989.
    • Appl. Phys. Lett.
    • Nakagawa, K.1    Van Gorkum, A.A.2    Shiraki, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.