Statistical modeling of metal-gate work-function variability in emerging device technologies and implications for circuit design

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn , Issue , 2008, Pages 270-277

  Dadgour, Hamed ^a   De, Vivek ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b INTEL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT DESIGNERS; CIRCUIT DESIGNS; CMOS TRANSISTORS; DEVICE TECHNOLOGIES; FABRICATION PROCESSES; GATE MATERIALS; GATE TRANSISTORS; KEY PARAMETERS; METAL NITRIDES; METAL WORKS; NEW SOURCES; PHYSICAL DIMENSIONS; PMOS DEVICES; RELIABILITY DEGRADATIONS; RELIABILITY PARAMETERS; SI DEVICES; SRAM CELLS; STATISTICAL FRAMEWORKS;

COMPUTER AIDED DESIGN; DESIGN; FUNCTIONS; GATES (TRANSISTOR); MATERIALS PROPERTIES; METALS; NETWORKS (CIRCUITS); NITRIDES; PARAMETER ESTIMATION; PROBABILITY DENSITY FUNCTION; RELIABILITY; TANTALUM COMPOUNDS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSISTORS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 57849122496     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCAD.2008.4681585     Document Type: Conference Paper

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