Intrinsic MOSFET parameter fluctuations due to random dopant placement

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 5, Issue 4, 1997, Pages 369-376

  Tang, Xinghai ^a,b   De, Vivek K ^a,c   Meindl, James D ^a,b  

^a IEEE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Dopant fluctuations; Intrinsic threshold variations; MOSFET parameter fluctuations; Random dopant placement; Random fluctuations; Threshold voltage fluctuations

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

RANDOM DOPANT PLACEMENT; THRESHOLD VOLTAGE FLUCTUATIONS;

MOSFET DEVICES;

EID: 0031365880     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/92.645063     Document Type: Article

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