Effect of discrete impurities on electron transport in ultrashort MOSFET using 3-D MC simulation

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 749-756

  Dollfus, Philippe ^a   Bournel, Arnaud ^a,b   Galdin, Sylvie ^a   Barraud, Sylvain ^a   Hesto, Patrice ^a  

^a UNIV PARIS SUD   (France)

^b CEA LETI   (France)

Author keywords

Doping fluctuations; Monte Carlo (MC) methods; MOSFETs; Semiconductor device doping; Semiconductor device modeling

Indexed keywords

MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THREE DIMENSIONAL;

CHANNEL IMPURITY DISTRIBUTION; DOPING FLUCTUATIONS;

ELECTRON TRANSPORT PROPERTIES;

EID: 2442484819     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.826844     Document Type: Article

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