Random dopant model for three-dimensional drift-diffusion simulations in metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters

Volumn 79, Issue 14, 2001, Pages 2267-2269

  Sano, Nobuyuki ^a   Tomizawa, Masaaki ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035474343     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1406980     Document Type: Article

References (16)

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14. This expression is oscillatory at large r, but its contribution is negligible if the integral region is sufficiently large. However, the fact that the charge density is broadened is of most importance, rather than its exact expression.
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