Random impurity scattering induced variability in conventional nano-scaled MOSFETs: Ab initio impurity scattering Monte Carlo simulation study

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Alexander, C L ^a   Roy, G ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; MONTE CARLO METHODS;

AB-INITIO; DRIFT-DIFFUSION; IMPURITY SCATTERING; MONTE CARLO SIMULATION; MOSFETS; NANO-MOSFETS; RANDOM DOPANTS;

MOSFET DEVICES;

EID: 46049104218     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346941     Document Type: Conference Paper

References (11)

1. A. Asenov, A. R. Brown, J. H. Davies, S. Kaya, G. Slavcheva. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs, IEEE Trans Elec Dev, 50, 1837-1852, 2003
2. C. Alexander, A. R. Brown, J. R. Watling, A. Asenov. Impact of scattering on random dopant induced current fluctuations in decanano MOSFETs, SISPAD 2004, 223-226, 2004
3. C. R. Arokianathan, J. H. Davies, A. Asenov. Ab initio Coulomb scattering in atomistic device simulation, VLSI Design, 8, 331-335, 1998
4. W. J. Gross, D. Vasileska, D. K. Ferry. A novel approach for introducing the electron-electron and electron-impurity interactions in particle based simulations. IEEE Trans Elec Dev Lett. 20, 463-465, 1999
5. C. J. Wordelman, U. Ravaioli. Integration of a particle-particle- particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra small semiconductor devices, IEEE Trans Elec Dev, 47, 410, 2000
6. P.Dollfus, A. Bournel, S. Galdin, S. Barraud, P. Hesto. Effect of discrete impuries on electron transport in ultra short MOSFETS using 3D MC simulation, IEEE Trans Elec Dev, 51, 749-756, 2004
7. C. Alexander, J. Watling, A. R. Brown and A. Asenov. Impact of single charge trapping in nano-MOSFETs: electrostatic vs transport effects, IEEE Trans Nano, 4, 339, 2005
8. C. Alexander, J. Watling, A. R. Brown and A. Asenov. Impact of scattering in atomistic device simulations, Solid State Elec, 49, 733, 2004
9. T. Ezaki, T. Ikezawa, M. Hane. Investigation of realistic dopant fluctuation induced device characteristics variation for sub-100nm CMOS by using atomistic 3D process/device simulator. Proc IEDM 2002, 311-314, 2002
10. S.Inaba et al. High performance 35nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide. IEDM Tech Digest 2001, 641-644, 2001
11. G. Roy, A. R. Brown, F. Adamu-Lema, S. Roy, A. Asenov. Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano MOSFETs, IEEE Trans Elec Dev, in press