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Volumn 14, Issue 11-12, 2008, Pages 358-365

The atomic layer deposition of HfO2 and ZrO2 using advanced metallocene precursors and H2O as the oxygen source

Author keywords

ALD; Cyclopentadienyl complexes; Hafnium oxide; High k dielectric; Thin film; Zirconium oxide

Indexed keywords

ATOMIC PHYSICS; CAPACITANCE; CARBON FILMS; HAFNIUM; HAFNIUM COMPOUNDS; HYDROGEN; ORGANOMETALLICS; OXIDES; OXYGEN; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILMS; WATER VAPOR; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS; ZIRCONIUM COMPOUNDS;

EID: 57849100217     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200806716     Document Type: Article
Times cited : (54)

References (59)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.