Plasma enhanced atomic layer deposition of HfO 2 and ZrO 2 high-k thin films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 3, 2005, Pages 488-496

  Lao, Sandy X ^a   Martin, Ryan M ^a   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT OXIDE THICKNESS (EOT); OXYGEN BONDS; PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD);

CURRENT DENSITY; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PERMITTIVITY; PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM COMPOUNDS;

HAFNIUM COMPOUNDS;

EID: 25444498708     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1894666     Document Type: Article

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