Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate

Electrochemical and Solid-State Letters

Volumn 5, Issue 5, 2002, Pages

  Conley Jr , J F ^a   Ono, Y ^a   Zhuang, W ^a   Tweet, D J ^a   Gao, W ^a   Mohammed, S K ^b   Solanki, R ^b  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; HYDROGEN; MORPHOLOGY; PERMITTIVITY; SILICON; SURFACE TREATMENT; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION; HAFNIUM NITRATE; HAFNIUM OXIDE;

HAFNIUM COMPOUNDS;

EID: 0036117443     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1462875     Document Type: Article

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