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Volumn 12, Issue 11, 2006, Pages 665-669

ALD of hafnium dioxide thin films using the new alkoxide precursor hafnium 3-methyl-3-pentoxide, Hf(mp)4

(9) Cho, Wontae b An, Ki Seok b Chung, Taek Mo b Kim, Chang Gyoun b So, Byung O c You, Yil Hwan c Hwang, Jin Ha c Jung, Donggeun d Kim, Yunsoo a

a Korea University (South Korea)

b Korea Research Institute of Chemical Technology (South Korea)

c Hong Ik University (South Korea)

d Sungkyunkwan University (South Korea)

Author keywords

ALD; Dielectrics; Hafnium 3 methyl 3 pentoxide; Hafnium dioxide; Thin films

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; AUGER ELECTRON SPECTROSCOPY; CARBON FILMS; DEPTH PROFILING; ELECTRON SPECTROSCOPY; FILM GROWTH; HAFNIUM; HAFNIUM COMPOUNDS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; RATE CONSTANTS; SURFACE REACTIONS; THICK FILMS; THICKNESS MEASUREMENT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALD; ALKOXIDE PRECURSORS; ATOMIC LAYER DEPOSITION (ALD; CARBON IMPURITIES; DIELECTRICS; HAFNIUM DIOXIDE; HAFNIUM DIOXIDES; OPTIMAL REACTION CONDITIONS; OXYGEN SOURCES; TEMPERATURE RANGES; TEMPERATURE WINDOWS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

AMORPHOUS FILMS;

EID: 34547116558 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200506458 Document Type: Article

Times cited : (13)

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