Atomic Layer Deposition of Hafnium Silicate Thin Films Using HfCl 2[N(SiMe3)2]2 and H2O

Electrochemical and Solid-State Letters

Volumn 7, Issue 4, 2004, Pages

  Nam, Won Hee ^a   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; COMPOSITION; DEPOSITION; FILM GROWTH; HAFNIUM COMPOUNDS; OPTIMIZATION; OXIDATION; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); GATE DIELECTRICS;

THIN FILMS;

EID: 1842582460     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1651392     Document Type: Article

References (10)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5243 (2001).
2. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett., 74, 2854 (1999).
3. L. Niinistö, M. Ritala, and M. Leskelä, Mater. Sci. Eng., B, 41, 23 (1996).
4. R. G. Gordon, J. Becker, D. Hausmann, and S. Suh, Chem. Mater., 13, 2463 (2001).
5. E. Vainonen-Ahlgren, E. Tois, T. Ahlgren, L. Khriachtchev, J. Marles, S. Haukka, and M. Tuominen, Comput. Mater. Sci., 27, 65 (2003).
6. W. Kim, S. Kang, S. Rhee, N. Lee, J. Lee, and H. Kang, J. Vac. Sci. Technol. A, 20, 2096 (2002).
7. W. Kim, S. Kang, and S. Rhee, J. Vac. Sci. Technol. A, 21, L16 (2003).
8. R. A. Andersen, Inorg. Chem., 18, 2928 (1979).
9. R. Matero, A. Rahtu, M. Ritala, M. Leskela, and T. Sjavaara, Thin Solid Films, 368, 1 (2000).
10. T. Suntola, in Handbook of Crystal Growth, D. T. J. Hurle, Editor, Vol. 3, p. 601., Elsevier, Amsterdam (1994).