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Volumn 7, Issue 4, 2004, Pages
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Atomic Layer Deposition of Hafnium Silicate Thin Films Using HfCl 2[N(SiMe3)2]2 and H2O
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Author keywords
[No Author keywords available]
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
CARRIER CONCENTRATION;
COMPOSITION;
DEPOSITION;
FILM GROWTH;
HAFNIUM COMPOUNDS;
OPTIMIZATION;
OXIDATION;
THERMAL EFFECTS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ATOMIC LAYER DEPOSITION (ALD);
GATE DIELECTRICS;
THIN FILMS;
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EID: 1842582460
PISSN: 10990062
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1651392 Document Type: Article |
Times cited : (18)
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References (10)
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