Improvements in reliability and leakage current properties of HfO 2 gate dielectric films by in Situ O3 oxidation of Si substrate

Electrochemical and Solid-State Letters

Volumn 7, Issue 11, 2004, Pages

  Park, Hong Bae ^a   Cho, Moonju ^a   Park, Jaehoo ^a   Lee, Suk Woo ^a   Park, Tae Joo ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FILM GROWTH; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDATION; RELIABILITY; SILICON; SILICON WAFERS; SUBSTRATES; THICKNESS CONTROL; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); INTERFACIAL CONTAMINATION; PROCESS COMPLEXITY;

DIELECTRIC FILMS;

EID: 10044240444     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1804976     Document Type: Article

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