Si, SiGe nanowire devices by top-down technology and their applications

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3107-3118

  Singh, Navab ^a   Buddharaju, Kavitha D ^a   Manhas, S K ^b   Agarwal, A ^a   Rustagi, Subhash C ^a   Lo, G Q ^a   Balasubramanian, N ^c   Kwong, Dim Lee ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

^c Silterra   (Malaysia)

Author keywords

Gate all around (GAA) nanowire (NW) transistors; Nonvolatile memory (NVM); NW CMOS; NW logic; Top down technology

Indexed keywords

APPLICATIONS; DATA STORAGE EQUIPMENT; GALLIUM ALLOYS; LOGIC CIRCUITS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SILICON; SWITCHING CIRCUITS; SWITCHING THEORY; TRANSISTORS;

GATE-ALL-AROUND (GAA) NANOWIRE (NW) TRANSISTORS; NONVOLATILE MEMORY (NVM); NW CMOS; NW LOGIC; TOP-DOWN TECHNOLOGY;

TECHNOLOGY;

EID: 56649122022     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005154     Document Type: Review

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