Observation of mobility enhancement in strained Si and sige tri-gate MOSFETs with multi-nanowire channels trimmed by hydrogen thermal etching

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 887-890

  Tezuka, T ^a   Toyoda, E ^b   Nakaharai, S ^c   Irisawa, T ^a   Hirashita, N ^a   Moriyama, Y ^a   Sugiyama, N ^a   Taoka, N ^c   Yamashita, Y ^c   Kiso, O ^c   Harada, M ^c   Yamamoto, T ^c   Takagi, S ^c,d  

^a TOSHIBA CORPORATION   (Japan)

^b Nissei Bldg   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING TECHNIQUES; LINE-EDGE ROUGHNESS; MOBILITY ENHANCEMENT; MOSFETS; STRAINED-SI; TRI-GATE;

ELECTRIC WIRE; ELECTRON DEVICES; ETCHING; HYDROGEN; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; OPTICAL DESIGN; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS;

MOSFET DEVICES;

EID: 50249144010     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419092     Document Type: Conference Paper

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