Complementary symmetry silicon nanowire logic: Power-efficient inverters with gain

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Volumn 2, Issue 10, 2006, Pages 1153-1158

  Wang, Dunwei ^a   Sheriff, Bonnie A ^a   Heath, James R ^a  

^a California Institute of Technology   (United States)

Author keywords

Field effect transistors; Nanotechnology; Nanowires; Semiconductors; Silicon

Indexed keywords

DIODE LOGIC CIRCUITS; ELECTRIC INVERTERS; FIELD EFFECT TRANSISTORS; GAIN CONTROL; GATES (TRANSISTOR); LOGIC GATES; SEMICONDUCTOR JUNCTIONS; WIRE;

DOPANT CONCENTRATIONS; POWER EFFICIENT INVERTERS; SILICON NANOWIRE (NW); SURFACE SENSITIVITY;

NANOTECHNOLOGY;

BORON; NANOTUBE; NANOWIRE; PHOSPHORUS; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRICITY; ELECTRONICS; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; TEMPERATURE;

BORON; CRYSTALLIZATION; ELECTRIC WIRING; ELECTRONICS; NANOTECHNOLOGY; NANOTUBES; NANOWIRES; PHOSPHORUS; SEMICONDUCTORS; SILICON; TEMPERATURE;

EID: 33748531867     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200600249     Document Type: Article

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