Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 595-598

  Jiang, Y ^a,b   Singh, N ^a   Liow, T Y ^a,b   Loh, W Y ^a   Balakumar, S ^a   Hoe, K M ^a   Tung, C H ^a   Bliznetsov, V ^a   Rustagi, S C ^a   Lo, G Q ^a   Chan, D S H ^b   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Ge condensation; Heterostructure; SiGe nanowires (SGNWs)

Indexed keywords

HETEROJUNCTIONS; HOLE MOBILITY; NANOWIRES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE; VALENCE BANDS;

DRIVE CURRENT; HOMOJUNCTION PLANAR DEVICE; PATTERN-SIZE-DEPENDENT; PMOS DEVICE;

MOSFET DEVICES;

EID: 44849126900     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.922548     Document Type: Article

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