A nanowire transistor for high performance logic and terabit non-volatile memory devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 144-145

  Lee, Hyunjin ^a   Ryu, Seong Wan ^a   Han, Jin Woo ^a   Yu, Lee Eun ^a   Im, Maesoon ^a   Kim, Chungjin ^a   Kim, Sungho ^a   Lee, Eujune ^a   Kim, Kuk Hwan ^a   Kim, Ju Hyun ^a   Bae, Dong Il ^a   Jeon, Sang Cheol ^b   Kim, Kwang Hee ^b   Lee, Gi Sung ^b   Oh, Jae Suh ^b   Park, Yun Chang ^b   Bae, Woo Ho ^b   Yoo, Jung Jae ^b   Yang, Jun Mo ^b   Lee, Hee Mok ^b   Choi, Yang Kyu ^a   more..

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; FUZZY LOGIC; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; LOGIC DEVICES; MESFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; ROTATION; SILICON;

3 DIMENSIONAL; CURRENT DIRECTION; DRIVING CURRENTS; HIGH-PERFORMANCE LOGIC; NANO WIRES; NON VOLATILE MEMORY (NVM) DEVICES; NON-VOLATILE MEMORY (NVM); OMEGA GATE; OXIDE/NITRIDE/OXIDE (ONO); P-CHANNEL; SILICON-NANOWIRE; SPHERICAL(PIVOT); TERABIT; VLSI TECHNOLOGIES;

CRYSTAL ORIENTATION;

EID: 43549091463     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339761     Document Type: Conference Paper

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