Low-temperature electron mobility in trigate SOI MOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 2, 2006, Pages 120-122

  Colinge, Jean Pierre ^a   Quinn, Aidan J ^b   Floyd, Liam ^b   Redmond, Gareth ^b   Alderman, John C ^b   Xiong, Weize ^c   Cleavelin, C Rinn ^c   Schulz, Thomas ^d   Schruefer, Klaus ^d   Knoblinger, Gerhard ^e   Patruno, Paul ^f  

^a University of California   (United States)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c TEXAS INSTRUMENTS   (United States)

^d INFINEON TECHNOLOGIES AG   (Germany)

^e INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^f PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

Charge carrier mobility; Cryogenic electronics; MOSFETs; Quantum wires; Semiconductor device measurements; Silicon on insulator (SOI) technology

Indexed keywords

CHARGE CARRIERS; CRYOGENIC EQUIPMENT; ELECTRON MOBILITY; OSCILLATIONS; SEMICONDUCTOR QUANTUM WIRES; SILICON ON INSULATOR TECHNOLOGY;

CHARGE CARRIER MOBILITY; CRYOGENIC ELECTRONICS; ENERGY SUBBANDS; GATE VOLTAGE; SEMICONDUCTOR DEVICE MEASUREMENTS;

MOSFET DEVICES;

EID: 31544433411     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.862691     Document Type: Article

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