Temperature effects on trigate SOI MOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 172-174

  Colinge, Jean Pierre ^a   Floyd, Liam ^b   Quinn, Aidan J ^b   Redmond, Gareth ^b   Alderman, John C ^b   Xiong, W ^c   Cleavelin, C Rinn ^c   Schulz, T ^d   Schruefer, Klaus ^d   Knoblinger, Gerhard ^e   Patruno, Paul ^f  

^a University of California Davis   (United States)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c TEXAS INSTRUMENTS   (United States)

^d INFINEON TECHNOLOGIES AG   (Germany)

^e INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^f PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

Cryogenic electronics; MOSFETs; Quantum wires; Semiconductor device measurements; Silicon on insulator (SOI) technology

Indexed keywords

CARRIER MOBILITY; DOPING (ADDITIVES); PHONONS; SEMICONDUCTOR QUANTUM WIRES; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

CRYOGENIC ELECTRONICS; DEVICE FIN; DOPING CONCENTRATION; SEMICONDUCTOR DEVICE MEASUREMENTS;

MOSFET DEVICES;

EID: 33644633458     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.869941     Document Type: Article

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