Si-nanowire CMOS inverter logic fabricated using gate-all-around (GAA) devices and top-down approach

Solid-State Electronics

Volumn 52, Issue 9, 2008, Pages 1312-1317

  Buddharaju, K D ^a   Singh, N ^a   Rustagi, S C ^a   Teo, Selin H G ^a   Lo, G Q ^a   Balasubramanian, N ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; MONOLITHIC INTEGRATED CIRCUITS; NANOSTRUCTURES; NANOWIRES; OPTICAL DESIGN; SILICON;

CMOS INVERTERS; CMOS LOGIC; GATE-ALL-AROUND; GATE-ALL-AROUND DEVICES; HIGH VOLTAGES; MONOLITHIC INTEGRATIONS; OPTIMIZED DESIGNS; TEST VEHICLES; TOP DOWN APPROACHES;

NANOSTRUCTURED MATERIALS;

EID: 50349092402     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.04.017     Document Type: Article

References (24)

1. Singh N., Agarwal A., Bera L.K., Liow T.Y., Yang R., Rustagi S.C., et al. IEEE Electron Dev Lett 27 5 (2006) 383-386
2. Singh N., Lim F.Y., Fang W.W., Rustagi S.C., Bera L.K., Agarwal A., et al. IEDM Tech Dig (2006) 548-551
3. Yeo K.H., Suk S.D., Li M., Teoh Y.Y., Cho K.H., Hong K.H., et al. IEDM Tech Dig (2006) 539-542
4. Gnani E., Reggiani S., Rudan M., and Baccarani G. IEEE ESSDERC Proc (2006) 371-374
5. Cui Y., Lauhon L.J., Gudiksen M.S., Wang J.F., and Lieber C.M. Appl Phys Lett 78 15 (2001) 2214-2216
6. Greytak A.B., Lauhon L.J., Gudiksen M.S., and Lieber C.M. Appl Phys Lett 84 21 (2004) 4176-4178
7. Wang D., Wang Q., Javey A., Tu R., Dai H., Kim H., et al. Appl Phys Lett 83 12 (2003) 2432-2434
8. Wu Y., and Yang P. Chem Mater 12 3 (2000) 605-607
9. Li G., Xi N., Chen H., Saeed A., and Yu M. IEEE Int Conf Robot & Automat 1 (2004) 428-433
10. Huang Y., and Lieber C.M. Pure Appl Chem 76 12 (2004) 2051-2068
11. Ye H., Gu Z., and Gracias D.H. IEEE Nanotechnol 5 1 (2006) 62-66
12. Melosh N.A., Boukai A., Diana F., Gerardot B., Badalato A., Petroff P.M., et al. Science 300 April (2003) 112-115
13. Wang D.W., Sheriff B.A., and Heath J.R. Small 2 10 (2006) 1153-1158
14. Taur Y., and Ning T.H. Fundamentals of modern VLSI devices (1998), Cambridge University Press pp. 224-231
15. Rustagi S.C., Singh N., Fang W.W., Buddharaju K.D., Omampuliyur S.R., Teo S.H.G., et al. IEEE Electron Dev Lett 28 11 (2007) 1021-1024
16. Fang W.W., Singh N., Bera L.K., Nguyen H.S., Rustagi S.C., Lo G.Q., et al. IEEE Electron Dev Lett 28 3 (2007) 211-213
17. Kedzierski J., Bokor J., and Anderson E. J Vac Sci Technol B 17 6 (1999) 3244-3247
18. Hauser J.R. IEEE Trans Educ 36 4 (1993) 363-368
19. Rainey B.A., Fried B.M., Ieong M., Kedzierski J., and Nowak E.J. IEEE Dev Res Conf Proc (2002) 47-48
20. Yu B., Chang L., Ahmed S., Wang H., Bell S., Yang C.-Y., et al. IEDM Tech Dig (2002) 251-254
21. Wu X., Chan P.C.H., Zhang S., Feng C., and Chan M. IEEE Electron Dev Lett 26 6 (2005) 416-418 June
22. Hamoui A.A., and Rumin N.A. IEEE Trans Circ Syst - II 47 10 (2000) 999-1007
23. Chau R., Datta S., Doczy M., Doyle B., Jin B., Kavalieros J., et al. IEEE Trans Nanotechnol 4 2 (2005) 153-158
24. Sung Dae S., Ming L., Yun Young Y., Kyoung Hwan Y., Keun Hwi C., In Kyung K., et al. IEDM Tech Dig (2007) 891-894