The influence of Coulomb centers located in HfO2/ SiO 2 gate stacks on the effective electron mobility

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Barraud, Sylvain ^a   Bonno, Olivier ^a   Casś, Mikal ^a  

^a MINATEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; DEGRADATION; ELECTRIC CURRENTS; ELECTRIC LOAD MANAGEMENT; ELECTRON MOBILITY; EXPERIMENTS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH ENERGY PHYSICS; LOCATION; LOGIC GATES; MOSFET DEVICES; PERMITTIVITY; PHOTOLITHOGRAPHY; SCATTERING; SEMICONDUCTING INDIUM; SILICON COMPOUNDS; TRANSISTORS;

COULOMB CENTERS; COULOMB SCATTERINGS; DIELECTRIC CONSTANTS; DIELECTRIC SCREENINGS; EFFECTIVE ELECTRON MOBILITIES; FIELD MOBILITIES; FIXED CHARGES; GATE STACKS; IMAGE CHARGES; INTERFACIAL LAYERS; INVERSION LAYERS; LARGE RANGES; LOW TEMPERATURES; MAIN FACTORS; MOBILITY DEGRADATIONS; MOBILITY MEASUREMENTS; MOBILITY MODELS; MOSFETS; ROOM TEMPERATURES; SCATTERING MECHANISMS; SUBBANDS;

FIELD EFFECT TRANSISTORS;

EID: 54049142074     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2968217     Document Type: Article

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