Modeling HfO2/SiO2/Si interface

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2412-2415

  Gavartin, J L ^a   Shluger, A L ^b  

^a Accelrys Limited UK   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Ab initio; Band alignment; Disorder; High k; Interface

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP;

ATOMIC DISORDER; BAND ALIGNMENT; NON-EPITAXIAL ATOMIC ARRANGEMENTS;

INTERFACES (MATERIALS);

EID: 34249041764     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.102     Document Type: Article

References (18)

1. Peakock P.W., and Robertson J. Phys. Rev. Lett. 92 (2004) 057601
2. Puthenkovilakam R., Carter E.A., and Chang J.P. Phys. Rev B 69 (2004) 155329
3. Fiorentini V., and Gulleri G. Phys. Rev. Lett. 89 (2002) 266101
4. Brodsky V., Rykova E.A., Bagatur'ants A.A., and Korkin A.A. Comp. Mat. Sci. 24 (2002) 278
5. Deminsky M., Knizhnik A., Umanskii I.BelovS., Rykova E., et al. Surf. Sci. 549 (2004) 67-86
6. Gavartin J., Fonseca L., Bersuker G., and Shluger A.L. Microelec. Eng. 80C (2005) 412
7. Hakala M.H., Foster A.S., Gavartin J.L., Havu P., Puska M.J., and Nieminen R.M. J. Appl. Phys. 100 (2006) 043708
8. Kim H., McIntyre P.C., Chui C.O., Saraswat K.C., and Stemmer S. J. Appl. Phys. 96 (2004) 3467
9. Sayan S., Emge T., Garfunkel E., Zhao X., Wielunski L., et al. J. Appl. Phys. 96 (2004) 7485-7491
10. Sharia O., Demkov A.A., Bersuker G., and Lee B.H. Phys Rev. B 75 (2007) 035306
11. Kresse G., and Furthmüller J. Comp. Mater. Sci. 6 (1996) 15
12. Gavartin J.L., Muñoz Ramo D., Shluger A.L., and Bersuker G. ECS Trans. 3 (2006) 277
13. Ceresoli D., and Vanderbilt D. Phys. Rev. B 74 (2006) 125108
14. Laughlin R.B. Phys. Rev. B 22 (1980) 3021
15. Yamasaki T., Kaneta C., Uchiyama T., Uda T., and Terakura K. Phys. Rev. B 63 (2001) 115314
16. Afanas'ev V.V., Stesmans A., Chen F., Shi X., and Campbell S.A. Appl. Phys. Lett. 81 (2002) 1053
17. Keister J.W., Rowe J.E., Kolodziej J.J., Niimi H., Madey T.E., and Lukovsky G. J. Vac. Sci. Technol. B 17 (1999) 1831
18. Robertson J. J. Vac. Sci. Technol. B 18 (2000) 1785