Electrical properties of Al2O3 gate dielectrics

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 830-834

  Lin, Changhai ^a   Kang, Jinfeng ^a   Han, Dedong ^a   Tian, Dayu ^a   Wang, Wei ^a   Zhang, Jinghua ^a   Liu, Meng ^a   Liu, Xiaoyan ^a   Han, Ruqi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Al2O3 gate dielectric; Carrier transport mechanism; Electrical properties; Interfacial traps

Indexed keywords

ANNEALING; DIELECTRIC FILMS; MAGNETRON SPUTTERING; THERMIONIC EMISSION; THIN FILMS;

INTERFACIAL TRAPS;

ALUMINA;

EID: 0037394840     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)01007-9     Document Type: Conference Paper

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