Scanning transmission electron microscopy of gate stacks with HfO 2 dielectrics and TiN electrodes

Applied Physics Letters

Volumn 87, Issue 12, 2005, Pages 1-3

  Agustin, Melody P ^a   Fonseca, Leonardo R C ^b   Hooker, Jacob C ^c   Stemmer, Susanne ^a  

^a University of California   (United States)

^b Freescale Semiconductores Brasil Ltda   (Brazil)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; GATE STACKS;

ANNEALING; DEPOSITION; DIELECTRIC MATERIALS; ELECTRODES; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

HAFNIUM COMPOUNDS;

EID: 28344456973     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2053362     Document Type: Article

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