Remote-charge-scattering limited mobility in field-effect transistors with Si O2 and Al2 O3 Si O2 gate stacks

Journal of Applied Physics

Volumn 98, Issue 11, 2005, Pages

  Saito, Shin Ichi ^a   Torii, Kazuyoshi ^a   Shimamoto, Yasuhiro ^a   Tonomura, Osamu ^a   Hisamoto, Digh ^a   Onai, Takahiro ^a   Hiratani, Masahiko ^a   Kimura, Shin'ichiro ^a   Manabe, Yukiko ^b   Caymax, Matty ^b   Maes, Jan Willem ^c  

^a HITACHI LTD   (Japan)

^b IMEC   (Belgium)

^c ASM International NV   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MISFETS); POLYCRYSTALLINE SILICON GATES; REMOTE CHARGE SCATTERING;

ALUMINA; CARRIER MOBILITY; DIELECTRIC MATERIALS; POLYCRYSTALLINE MATERIALS; SCATTERING; SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 29144504018     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2135878     Document Type: Article

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