Identification of sub-band-gap absorption features at the Hf O2 Si (100) interface via spectroscopic ellipsometry

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Price, J ^a   Lysaght, P S ^a   Song, S C ^a   Li, Hong Jyh ^b   Diebold, A C ^c  

^a SEMATECH   (United States)

^b INTEL CORPORATION   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; ENERGY GAP; FUSED SILICA; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY;

SI CRITICAL POINTS; SILICON SUBSTRATE; SUB-BAND-GAP ABSORPTION;

HAFNIUM COMPOUNDS;

EID: 34547838740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769389     Document Type: Article

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