First principles study of the Hf O2 Si O2 interface: Application to high- k gate structures

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Ha, Jeong Hee ^a   McIntyre, Paul C ^a   Cho, Kyeongjae ^b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONS; HAFNIUM; INTERFACES (MATERIALS); PERMITTIVITY; SILICON;

DENSITY FUNCTIONAL THEORY SIMULATIONS; FIRST PRINCIPLES STUDY; OXYGEN COORDINATION;

PROBABILITY DENSITY FUNCTION;

EID: 33847173725     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433696     Document Type: Article

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