Computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 2046-2052

  Hakim, M M A ^a   Haque, A ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; MATHEMATICAL MODELS; PERMITTIVITY; POISSON EQUATION; QUANTUM THEORY;

DIRECT TUNNELING (DT);

MOS DEVICES;

EID: 0043011955     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1589173     Document Type: Article

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