Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 "high k" and 2 metal deposition techniques

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1886-1889

  Cosnier, V ^a   Besson, P ^a   Loup, V ^b   Vandroux, L ^b   Minoret, S ^b   Casse M ^b   Garros, X ^b   Pedini, J M ^a   Lhostis, S ^a   Dabertrand, K ^a   Morin, C ^a   Wiemer, C ^c   Perego, M ^c   Fanciulli, M ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c LABORATORIO MDM   (Italy)

Author keywords

HfO2; Interface; Stability; TiN

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; LEAKAGE CURRENTS; THERMODYNAMIC STABILITY; THIN FILMS;

ATOMIC VAPOR DEPOSITION; MOBILITY DEGRADATION;

HAFNIUM COMPOUNDS;

EID: 34248657003     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.041     Document Type: Article

References (2)

1. L.-A. Ragnarsson, S. Severia, L. Trojmana, D. P. Brunco, et al., VLSI 2005, Session 12B.
2. Seiji Inumiya, Yasushi Akasaka, Takeo Matsuki, Fumio Ootsuka, Kazuyoshi Torii* and Yasuo Nara. IEDM 2005, Session 2.1.