Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 299-303

  Giustino, Feliciano ^a   Umari, Paolo ^a   Pasquarello, Alfredo ^a  

^a NONE

Author keywords

Density functional theory; Dielectric constant; High k dielectrics; Si SiO2 interface

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOS DEVICES; PERMITTIVITY; PROBABILITY DENSITY FUNCTION; THIN FILMS;

DIELECTRIC EFFECTS;

SILICA;

EID: 1642634162     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.011     Document Type: Conference Paper

References (19)

1. Schulz M. Nature (London). 399:1999;729-730.
2. Muller D.A., Wilk G.D. Appl. Phys. Lett. 79:2001;4195-4197.
3. Muller D.A., Sorsch T., Moccio S., Baumann F.H., Evans-Lutterodt K., Timp G. Nature (London). 399:1999;758-761.
4. Perkins C.M., Triplett B.B., Mclntyre P.C., Saraswat K.C., Haukka S., Tuominen M. Appl. Phys. Lett. 78:2001;2357-2359. and references therein.
5. Tit N., Dharma-Wardana M.W.C. J. Appl. Phys. 86:1999;387-395.
6. Pasquarello A., Hybertsen M.S., Car R. Phys. Rev. B. 53:1996;10942-10950 Pasquarello A., Hybertsen M.S., Car R. Appl. Surf. Sci. 104:1996;317-322.
7. Pasquarello A., Hybertsen M.S., Car R. Phys. Rev. B. 53:1996;10942-10950 Pasquarello A., Hybertsen M.S., Car R. Appl. Surf. Sci. 104:1996;317-322.
8. Rochet F., Poncey C., Dufour G., Roulet H., Guillot C., Sirotti F. J. Non-Cryst. Solids. 216:1997;148-155.
9. Pasquarello A., Laasonen K., Car R., Lee C., Vanderbilt D. Phys. Rev. Lett. 69:1992;1982-1985 Laasonen K., Pasquarello A., Car R., Lee C., Vanderbilt D. Phys. Rev. B. 47:1993;10142-10153.
10. Pasquarello A., Laasonen K., Car R., Lee C., Vanderbilt D. Phys. Rev. Lett. 69:1992;1982-1985 Laasonen K., Pasquarello A., Car R., Lee C., Vanderbilt D. Phys. Rev. B. 47:1993;10142-10153.
11. Perdew J.P., Chevary J.A., Vosko S.H., Jackson K.A., Pederson M.R., Singh D.J., Fiolhais C. Phys. Rev. B. 46:1992;6671-6687.
12. Dal Corso A., Pasquarello A., Baldereschi A., Car R. Phys. Rev. B. 53:1996;1180-1185.
13. Vanderbilt D. Phys. Rev. B. 41:1990;7892-7895.
14. Car R., Parrinello M. Phys. Rev. Lett. 55:1985;2471-2474.
15. Umari P., Pasquarello A. Phys. Rev. Lett. 89:2002;157602.
16. x reported in Section 3 change by an amount of at most 5%.
17. Harris H., Choi K., Mehta N., Chandolu A., Biswas N., Kipshidze G., Nikishin S., Gangopadhyay S., Temkin H. Appl. Phys. Lett. 81:2002;1065-1067.
18. Eisenbeiser K., Finder J.M., Yu Z., Ramdani J., Curless J.A., Hallmark J.A., Droopad R., Ooms W.J., Salem L., Bradshaw S., Overgaard C.D. Appl. Phys. Lett. 76:2000;1324-1326.
19. Yamamoto K., Hayashi S., Niwa M., Asai M., Horii S., Miya H. Appl. Phys. Lett. 83:2003;2229-2231.