Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

Semiconductor Science and Technology

Volumn 18, Issue 11, 2003, Pages 927-937

  Gamiz F ^a   Godoy, A ^a   Roldan J B ^a   Carceller, J E ^a   Cartujo, P ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRON SCATTERING; IONIZATION; MONTE CARLO METHODS; POLYSILICON; SCREENING; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

COULOMB SCATTERING; IMAGE CHARGES; INVERSION LAYERS;

MOSFET DEVICES;

EID: 0242661903     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/11/304     Document Type: Article

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