Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 440-447

  Yang, Nian ^a,b   Kirklen Henson, W ^a   Hauser, John R ^a   Wortman, Jimmie J ^b  

^a ADVANCED MICRO DEVICES   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC FILMS; ELECTRON GAS; ELECTRON SCATTERING; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDATION; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; ULTRATHIN FILMS;

ULTRATHIN GATE OXIDES;

MOSFET DEVICES;

EID: 0033882265     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822292     Document Type: Article

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