Temperature dependence of gate currents in thin Ta2O5 and TiO2 films

Applied Physics Letters

Volumn 79, Issue 17, 2001, Pages 2803-2804

  Luo, Z J ^a   Guo, Xin ^a,c   Ma, T P ^a   Tamagawa, T ^b  

^a Yale University   (United States)

^b Jet Process Corp   (United States)

^c ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035934742     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1412823     Document Type: Article

References (4)

1. D. Park, Q. Lu, T.-J. King, C. Hu, A. Kalnitsky, S.-P. Tay, and C.-C. Cheng, IEDM Tech. Dig. 381 (1998).
2. X. Guo, T. P. Ma, T. Tamagawa, and B. L. Halpern, IEDM Tech. Dig. 377 (1998).
3. T. P. Ma, IEEE Trans. Electron Devices 45, 680 (1998).
4. H. Itokawa, T. Maruyama, S. Miyazaki, and M. Hirose, Proc. SSDM 158 (Japan Society of Applied Physics, 1999).