Performance of HfO 2/TiN gate stacks with in situ grown and O 3 chemical interfacial oxide layers

Applied Physics Letters

Volumn 87, Issue 25, 2005, Pages 1-3

  Park, Chang Seo ^a   Moumen, Naim ^a   Sim, Jang Hoan ^a   Barnett, Joel ^a   Lee, Byoung Hun ^a   Bersuker, Gennadi ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL INTERFACIAL OXIDE LAYERS; HFO 2/TIN; OXIDE LAYERS; TRANSIENT CHARGE TRAPPING;

DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS;

SURFACE CHEMISTRY;

EID: 29144437802     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2149511     Document Type: Article

References (14)

1. W. Tsai, L. Ragnarsson, P. J. Chen, B. Onsia, R. J. Carter, E. Cartier, E. Young, M. Green, M. Caymax, S. De Gendt, and M. Heyns, Proc. Dig. Papers, Symp. VLSI Technol., 2003, pp. 3A-3.
2. C. S. Kang, H.-J. Cho, K. Onishi, R. Choi, Y. H. Kim, R. Nieh, J. Han, S. Krishnan, A. Shahriar, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2002, 865.
3. S. Inumiya, K. Sekine, S. Niwa, A. Kaneko, M. Sato, T. Watanabe, H. Fukui, Y. Kamata, M. Koyama, A. Nishiyama, M. Takayanagi, K. Eguchi, and Y. Tsunashima, VLSI Tech. Sym. Dig., 2003, pp. 17-18.
4. M. Koike, T. Ino, Y. Kamimuta, M. Koyama, Y. Kamata, M. Suzuki, Y. Mitani, A. Nishiyama, and Y. Tsunashima, Tech. Dig. - Int. Electron Devices Meet. 2003, 107.
5. H. Bender, T. Conard, H. Nohira, J. Petry, O. Richard, C. Zhao, B. Brijs, W. Besling, C. Detavernier, W. Vandervorst, M. Caymax, S. De Gendt, J. Chen, J. Kluth, W. Tsai, and J. W. Maes, International Workshop on Gate Insulator, session 5, 2001.
6. Y. Senzaki, S. Park, H. Chatham, L. Bartholomew, and W. Nieveen, J. Vac. Sci. Technol. A 22, 1175 (2004).
7. J. R. Hauser and K. Ahmed, International Conference on Characterization and Metrology for ULSI Technology, 1998, pp. 235-239.
8. J. R. Hauser, IEEE Trans. Electron Devices 43, 1981 (1996).
9. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
10. G. Bersuker, P. Zeitzoff, J. H. Sim, B. H. Lee, R. Choi, G. Brown, and C. D. Young, Appl. Phys. Lett. 87, 0402095 (2005).
11. C. D. Young, P. Zeitzoff, G. A. Brown, G. Bersuker, B. H. Lee, and J. Hauser, IEEE Electron Device Lett. 26, 586 (2005).
12. G. Bersuker, J. Barnett, N. Moumen, B. Foran, C. D. Young, P. Lysaght, J. Peterson, B. H. Lee, P. M. Zeitzoff, and H. R. Huff, Jpn. J. Appl. Phys., Part 1 43, 7899 (2004).
13. G. Bersuker, J. Peterson, J. Barnett, J. Sim, R. Choi, B. H. Lee, P. Lysaght, and H. R. Huff, The 207th Electrochemical Society Meeting, Abs. No. 623, 2005.
14. H. F. Okorn-Schmidt, IBM J. Res. Dev. 43, 3 (1999).